Pronađeno: 1-10 / 49 radova

Autori: Manic Ivica Dj

>> Filter: Samo Article i Review

>> Sve godine

Naslov Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress (Article; Early Access)
Autori Veljkovic Sandra  Mitrovic Nikola I Davidovic Vojkan S Golubovic Snezana M Djoric-Veljkovic Snezana M Paskaleva Albena Spassov Dencho Stankovic Srboljub J Andjelkovic Marko Lj Prijic Zoran D Manic Ivica Dj Prijic Aneta P Ristic Goran S  Dankovic Danijel M 
Info JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, (2022), vol. br. , str. -
Projekat European Union's Horizon 2020 research and innovation program [857558-ELICSIR]; Ministry of Education, Science and Technology Development of the Republic of Serbia [451-03-9/2021-14/200102]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov NBTI and irradiation related degradation mechanisms in power VDMOS transistors (Article; Proceedings Paper)
Autori Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Stankovic Srboljub J Prijic Aneta P Prijic Zoran D Manic Ivica Dj Dankovic Danijel M 
Info MICROELECTRONICS RELIABILITY, (2018), vol. 88-90 br. , str. 135-141
Projekat Ministry of Education, Science and Technological Development of Republic of Serbia [OI-171026]; Serbian Academy of Science and Arts (SASA) [F-148]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov A review of pulsed NBTI in P-channel power VDMOSFETs (Review)
Autori Dankovic Danijel M Manic Ivica Dj Prijic Aneta P Davidovic Vojkan S Prijic Zoran D Golubovic Snezana M Djoric-Veljkovic Snezana M Paskaleva Albena Spassov Dencho Stojadinovic Ninoslav D 
Info MICROELECTRONICS RELIABILITY, (2018), vol. 82 br. , str. 28-36
Projekat Ministry of Science of the Republic of Serbia [OI-171026, TR-32026]; SASA [F-148]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors (Article)
Autori Davidovic Vojkan S Dankovic Danijel M Ilic Aleksandar Manic Ivica Dj Golubovic Snezana M Djoric-Veljkovic Snezana M Prijic Zoran D Prijic Aneta P Stojadinovic Ninoslav D 
Info JAPANESE JOURNAL OF APPLIED PHYSICS, (2018), vol. 57 br. 4, str. -
Projekat Serbian Academy of Sciences and Arts (SASA) [F-148]; Ministry of Education, Science and Technological Development of the Republic of Serbia [TR32026, OI171026]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov Modelling of Threshold Voltage Shift in Pulsed NBT Stressed P-Channel Power VDMOSFETs (Proceedings Paper)
Autori Dankovic Danijel M Manic Ivica Dj Stojadinovic Ninoslav D Prijic Zoran D Djoric-Veljkovic Snezana M Davidovic Vojkan S Prijic Aneta P Paskaleva Albena Spassov Dencho Golubovic Snezana M 
Info 2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL), (2017), vol. br. , str. 147-151
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Serbian Academy of Sciences and Arts (SASA) [F-148]
Ispravka Web of Science   Citati: Web of Science   Scopus  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov Electrical and Charge Trapping Properties of HfO2/Al2O3 Multilayer Dielectric Stacks (Proceedings Paper)
Autori Davidovic Vojkan S Paskaleva Albena Spassov Dencho Guziewicz Elzbieta Krajewski T Golubovic Snezana M Djoric-Veljkovic Snezana M Manic Ivica Dj Dankovic Danijel M Stojadinovic Ninoslav D 
Info 2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL), (2017), vol. br. , str. 143-146
Projekat SASA [F-148]
Ispravka Web of Science   Citati: Web of Science   Scopus  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov On the Recoverable and Permanent Components of NBTI in p-Channel Power VDMOSFETs (Article)
Autori Dankovic Danijel M Manic Ivica Dj Davidovic Vojkan S Prijic Aneta P Marjanovic Milos B Ilic Aleksandar Prijic Zoran D Stojadinovic Ninoslav D 
Info IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (2016), vol. 16 br. 4, str. 522-531
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis, Serbia
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors (Article)
Autori Davidovic Vojkan S Dankovic Danijel M Ilic Aleksandar Manic Ivica Dj Golubovic Snezana M Djoric-Veljkovic Snezana M Prijic Zoran D Stojadinovic Ninoslav D 
Info IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (2016), vol. 63 br. 2, str. 1268-1275
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science   Scopus  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET (Article)
Autori Dankovic Danijel M Stojadinovic Ninoslav D Prijic Zoran D Manic Ivica Dj Davidovic Vojkan S Prijic Aneta P Djoric-Veljkovic Snezana M Golubovic Snezana M 
Info CHINESE PHYSICS B, (2015), vol. 24 br. 10, str. -
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
Naslov Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation (Article)
Autori Dankovic Danijel M Manic Ivica Dj Prijic Aneta P Djoric-Veljkovic Snezana M Davidovic Vojkan S Stojadinovic Ninoslav D Prijic Zoran D Golubovic Snezana M 
Info SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2015), vol. 30 br. 10, str. -
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]
Ispravka Web of Science   Članak   Elečas   Rang časopisa   Citati: Web of Science  
facebook sharing button
twitter sharing button
linkedin sharing button
gmail sharing button
copy sharing button
>> Sve godine

Ispis zapisa u formatu:TXT | BibTeX